Growth and band gap of strained (110) Si, ,&e, layers on silicon substrates by chemical vapor deposition
نویسندگان
چکیده
We report chemical vapor deposition growth of strained Sir-,Gex alloy layers on (110) Si substrates. Compared to the same growth conditions on (100) substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16<,&0.43 is evaluated and compared to theory. Finally, a surprisingly large “no-phonon” replica line strength ratio was observed as compared with that observed in (100) layers.
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